Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software

C. O. Lawani; G. J.  Ibeha; Olumide Ige; Eli Danladi; J. O.  Emmanuela; A. J.  Ukwenya; P. O.  Oyedare

doi:10.46481/jnsps.2021.133

Authors

C. O. Lawani
Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
G. J. Ibeha
Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
Olumide Ige
Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
D. Eli
[email protected]

Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria; Department of Physical Sciences, Greenfield University, Kasarami, Kaduna, Nigeria
J. O. Emmanuel
Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria; Department of Basic Science and General Studies, Federal College of Forestry Mechanization, Kaduna, Nigeria
A. J. Ukwenya
Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
P. O. Oyedare
Department of Science Laboratory Technology, Federal Polytechnic Ede, Osun State, Nigeria

Keywords:

SCAPs,, CIGS,, Multivalent defect,, buffer layer,, absorber,

Abstract

The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In₂S₃|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 10¹⁴ cm^-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm^-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 10¹⁰ cm^-3 and 10¹⁷ cm^-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 10¹⁰ cm^-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm^-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In₂S₃ (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.

Dimensions

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