Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software


  • C. O. Lawani Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
  • G. J. Ibeha Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
  • Olumide Ige Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
  • D. Eli Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria; Department of Physical Sciences, Greenfield University, Kasarami, Kaduna, Nigeria
  • J. O. Emmanuel Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria; Department of Basic Science and General Studies, Federal College of Forestry Mechanization, Kaduna, Nigeria
  • A. J. Ukwenya Department of Physics, Nigerian Defence Academy, Kaduna, Nigeria
  • P. O. Oyedare Department of Science Laboratory Technology, Federal Polytechnic Ede, Osun State, Nigeria


SCAPs,, CIGS,, Multivalent defect,, buffer layer,, absorber,


The effect of multivalent defect density, thickness of absorber and buffer layer thickness on the performance of CIGS solar cells were investigated systematically. The study was carried out using Solar Cells Capacitance Simulator (SCAPS) code, which is capable of solving the basic semiconductor equations. Employing numerical modelling, a solar cell with the structure Al|ZnO : Al|In2S3|CIGS|Pt was simulated and in it, a double acceptor defect (-2/-1/0) with a density of 1014 cm-3 was set in the absorber in the first instance. This initial device gave a power conversion efficiency (PCE) of 25.85 %, short circuit current density (Jsc) of 37.9576 mAcm-2, Photovoltage (Voc) of 0.7992 V and fill factor (FF) of 85.22 %. When the density of multivalent defect (-2/-1/0) was varied between 1010 cm-3 and 1017 cm-3 the solar cells performance dropped from 26.81 % to 16.87 %. The champion device was with multivalent defect of 1010 cm-3 which shows an enhancement of 3.71 % from the pristine device. On varying the CIGS layer thickness from 0.4 um to 3.6 um, an increase in PCE was observed from 0.4 um to 1.2 um then the PCE began to decrease beyond a thickness of 1.2 um. The best PCE was recorded with thickness of 1.2 um which gave Jsc of 37.7506 mAcm-2, Voc of 0.8059 V, FF of 85.2655 %. On varying the In2S3 (buffer) layer thickness from 0.01 um to 0.08 um, we observed that there was no significant change in photovoltaic parameters of the solar cells as buffer layer thickness increased.


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Lawani et al



How to Cite

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software. (2021). Journal of the Nigerian Society of Physical Sciences, 3(2), 48-58.



Original Research

How to Cite

Numerical Simulation of Copper Indium Gallium Diselenide Solar Cells Using One Dimensional SCAPS Software. (2021). Journal of the Nigerian Society of Physical Sciences, 3(2), 48-58.