Investigation of the behaviour of tunable chalcogenide-Bismuth based perovskite BiTl (SxSe1-x)3(X = 0, 0.33, 0.67, 1): first principles calculations

Abstract

Density functional theory (DFT) driven by the quantum ESPRESSO code was used in this study to investigate the structural, opto-electronic, and thermoelectric properties of ternary perovskite chalcogenide compound. This is to examine their possible use in optoelectronics and reducing the dependency on silicon and fossil fuel. The Perovskite compounds crystalize in the cubic phase with a space group Pm-3m. The volume versus energy is fitted by the Birch-Murnaghan equation of state which yielded the equilibrium lattice constant of 8.353, 8.488, 8.629 and 8.806, bulk modulus of 255.8, 242.7, 233.5 and 222.4, for BiTlS3 , BiTlS2 Se1 , BiTlS1 Se2 and BiTlSe3 . Indirect band gaps of 2.6 eV, 2.7 eV, 2.9 eV, and 3.2 eV were obtained for BiTlS3 , BiTlS2 Se1 , BiTlS1 Se2 and BiTlSe3 compounds, respectively. Also, increment in the energy from 0 eV to 10 eV resulted in optical properties fluctuation within 0 cm-1 to 1.5 × 109 cm-1 for absorption coefficient in the compounds. However, a variation from 10 eV to 20 eV moved the absorption coefficient to 4.2 × 109 cm-1 for all the compounds from visible to the UV range. Furthermore, the observed properties show that the value of figure of merit obtained is 0.125 for BiTlS3 , 0.100 for BiTlS2 Se1 , 0.068 for BiTlS1 Se2 and 0.055 for BiTlSe3 at 300 K. By adjusting the chalcogen ratio, BiTlX3 (X = S, Se) possess the tunable band gap in the whole visible light range, which is of great significance for the development of new-type, high-efficient semiconductor material and optoelectronic devices, while the low thermoelectric values predict the compounds use as sensors. The proposed results may pave the way for further investigations into the use of the perovskite compounds for optoelectronic devices.